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ArF Laser Induced Photochemical Substitution of OH Radicals into Teflon Surface Using Al(OH)3 Solution

Published online by Cambridge University Press:  25 February 2011

M. Okoshi ,
H. Kashiura ,
T. Miyokawa ,
K. Toyoda  and
M. Murahara
M. Okoshi
Affiliation:
Graduate Student of Faculty Engineering, Tokai University
H. Kashiura
Affiliation:
Graduate Student of Faculty Engineering, Tokai University
T. Miyokawa
Affiliation:
Graduate Student of Faculty Engineering, Tokai University
K. Toyoda
Affiliation:
Graduate Student of Faculty Engineering, Tokai University
M. Murahara
Affiliation:
Graduate Student of Faculty Engineering, Tokai University
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Abstract

OH radicals were photochemically substituted for fluorine atoms in the teflon surface by using an ArF excimer laser light and an Al(OH)3 solution. This method is simple and can be performed in air atmosphere. In the process, the teflon film was placed on the Al(OH)3 which were dissolved in NaOH water solution; the ArF excimer laser light was irradiated the sample surface and the solution. By irradiating the laser, the surface was defluorinated by the aluminium atoms photodissociated from the Al(OH)3 solution, and the dangling bonds which were formed in the defluorinated surface combined with the OH radicals also photodissociated. The hydrophilic property of the photomodified surface was evaluated by the measurement of the contact angle with water. The defluorination and the OH radicals substitution were inspected by the XPS analysis and the ATR-FTIR measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 737
Copyright
Copyright © Materials Research Society 1993

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