No CrossRef data available.
Published online by Cambridge University Press: 15 February 2011
Atom transport under irradiation is determined by the concentration of freely migrating defects, which depends on the dynamical equilibrium between production and annihilation rates. In order to determine effective values of both of these quantities for the case of ion irradiation, spatially resolved self-diffusion measurements were performed on single crystals of nickel which contained several thin tracer layers at different depths. By fitting the solution of a diffusion equation to the depth dependent measurements effective fractional production rates of freely migrating defects and effective sink strengths have been obtained.