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Atomistic simulations of the Ostwald ripening of Si nanoparticles ion beam synthesized in SiO2

Published online by Cambridge University Press:  17 March 2011

C. Bonafos ,
M. Carrada ,
B. Colombeau ,
A. Altibelli ,
G. Ben Assayag ,
B. Garrido ,
M. Lopez ,
A. Perez-Rodriguez ,
J. R. Morante  and
A. Claverie
C. Bonafos
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP4347 31055 Toulouse Cedex 04, France
M. Carrada
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP4347 31055 Toulouse Cedex 04, France
B. Colombeau
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP4347 31055 Toulouse Cedex 04, France
A. Altibelli
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP4347 31055 Toulouse Cedex 04, France
G. Ben Assayag
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP4347 31055 Toulouse Cedex 04, France
B. Garrido
Affiliation:
EME, Departament d'Electronica, Universitat de Barcelona, c. Marti i Franquès 1, 08028 Barcelona, Spain
M. Lopez
Affiliation:
EME, Departament d'Electronica, Universitat de Barcelona, c. Marti i Franquès 1, 08028 Barcelona, Spain
A. Perez-Rodriguez
Affiliation:
EME, Departament d'Electronica, Universitat de Barcelona, c. Marti i Franquès 1, 08028 Barcelona, Spain
J. R. Morante
Affiliation:
EME, Departament d'Electronica, Universitat de Barcelona, c. Marti i Franquès 1, 08028 Barcelona, Spain
A. Claverie
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP4347 31055 Toulouse Cedex 04, France
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Abstract

Most studies of Si nanocrystals ion beam synthesized in SiO2 have shown that a link exists between the observed physical properties and the characteristics of the « populations » of nanoparticles (size-distribution, density, volume fraction). Nevertheless, the direct measurement of these parameters by Transmission Electron Microscopy (TEM) is very difficult and predictive simulations are essential to make the kinetic study complete. This paper presents atomistic simulations aimed at predicting the kinetic evolution of the Si nanoparticles during annealing, taking into account eventual interaction effects. The theoretical results are compared to TEM measurements of the size-distributions observed after high temperature annealing. Experimentally, the growth of these nanoparticles is very slow but their size significantly increases when increasing the initial Si excess. Simulations are in agreement with these experimental results only when taking into account possible interactions between neighboring particles for initial supersaturations larger than 10 at. %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.7
Copyright
Copyright © Materials Research Society 2001

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References

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