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The Behavior of Free-Carriers During Rapid Thermal Annealing of Doped Silicon

Published online by Cambridge University Press:  28 February 2011

B. Lojek
B. Lojek*
Affiliation:
Motorola Inc., Advanced Technology Center/M 350 2200 W. Broadway Rd. Mesa, AZ 85202
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Abstract

Radiation and the resulting excess concentration of free carriers has a strong impact on several physical processes in silicon. New experimental results involving RTA are compared with previous experimental practice. Several aspects of the new result raise questions about the validity of the assumptions which were used in the past. It is concluded that radiation significantly enhances annealing processes, especially during the initial phase of RTA. Based on the study of the physical phenomena involved in the irradiated silicon, it is shown that the absorption and recombination rate are the most affected parameters and they are most likely the reason for the underestimation of the magnitude of excess free carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 33
Copyright
Copyright © Materials Research Society 1991

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References

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