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Bonded Hydrogen Atom Participation in Metastable Defect Formation in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

G. Lucovsky  and
H. Yang
G. Lucovsky
Affiliation:
Departments of Physics, Electrical and Computer Engineering, Materials Science and Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695
H. Yang
Affiliation:
Departments of Physics, Electrical and Computer Engineering, Materials Science and Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695
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Abstract

This paper proposes intrinsic reaction pathways for generation of metastable defects in hydrogenated undoped or intrinsic amorphous silicon (i-a-Si:H). Since these pathways involve only silicon (Si) and hydrogen (H) atoms, this approach is valid for device grade materials in which concentrations of oxygen (0) atoms, and nitrogen-hydrogen (N-H) groups are present at concentrations below about 1019 cm−3. Ab initio calculations demonstrate that the proposed generation pathway reactions are exothermic with relatively small reaction barriers (< 0.4 eV).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 715
Copyright
Copyright © Materials Research Society 1998

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References

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