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Boron Nitride Emitters

Published online by Cambridge University Press:  10 February 2011

R. W. Pryor ,
Lihua Li ,
G. Minina  and
H. H. Busta
R. W. Pryor
Affiliation:
Institute for Manufacturing Research, Wayne State University, Detroit, Michigan 48201, R.W.Pryor@wayne.edu
Lihua Li
Affiliation:
Institute for Manufacturing Research, Wayne State University, Detroit, Michigan 48201
G. Minina
Affiliation:
Sarnoff Corporation, Princeton NJ, 08543
H. H. Busta
Affiliation:
Sarnoff Corporation, Princeton NJ, 08543
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Abstract

New observations are presented on the emission of electrons from n-type boron nitride (BN) cold cathode films. These carbon-doped BN films demonstrate a significant improvement in the electron emission current, on the order of 1 to 3 orders of magnitude, as a function of the extraction field for many different materials and morphologies.

These BN cold cathodes have yielded stable DC currents in excess of 4 mA at an extraction field of approximately 30 V/μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 113
Copyright
Copyright © Materials Research Society 1998

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References

1 See the Proceedings of the International Vacuum Microelectronics Conferences as published in J. Vac. Sci. & Tech. B, March / April, 1996 & 1997 Google Scholar
2 Busta, H.H., Pryor, R.W., “Electron emission from a laser ablated and laser annealed BN thin film emitter”, J. Appl. Phys., vol.82, no.10, p. 5148–53.Google Scholar
3 Busta, H.H., Pryor, R.W., “Performance of laser ablated laser annealed BN emitters”, Technical Digest, Int. Vac. Microel. Conf '97, p. 557.Google Scholar
4 Sugino, T., Kawasalci, S., Tanioka, K., Shirafuji, J., “Electron emission characteristics of boron nitride films synthesized by plasma-assisted chemical vapor deposition,” Technical Digest, Int. Vac. Microel. Conf. '97, p. 123.Google Scholar
5 Pryor, R.W., “Carbon-doped boron nitride cold cathodes”, Appl. Phys. Lett. 68 (13), 25 March 1996 pp 1802–1804 Google Scholar
6 Chi, E.J., Shim, J.Y., Baik, H.I, “Effects of heat treatment on the field emission prcperties of amorphous carbon nitride”, Technical Digest, Int. Vac. Microel. Conf '97, p. 127.Google Scholar
7 Unclerwood, R.D., Kapoluck, D., Keller, S, Keller, B.P., Baars, S.P Den, Mishra, U.K, “GaN FEA diode with integrated anode,” Technical Digest, Int. Vac. Microel. Conf '97, p. 132.Google Scholar
8 Pryor, R.W., “Polycrystalline Diamond, Boron Nitride and Carbon Nitride Thin Film Cold Cathodes”, Mat. Res. Soc. Symp. Proc., Vol. 416, (Materials Research Society 1996) p425 Google Scholar
9 Busta, H., Gammnie, G., Skala, S., “Pressure dependency of emission currents of Si, Mo, Au, and SiC field emitters,” Technical Digest, Int. Vac. Microel. Conf '97, p. 132.Google Scholar
10 Kittel, C., Introduction to Solid State Physics, 5th Edition (John Wiley & Sons, Inc., New York, 1976) p 238.Google Scholar
11 Smith, R. A., Semiconductors, (Cambridge University Press, Cambridge, 1968) p 170.Google Scholar
12 Pryor, R.W., Li, Lihua and Busta, H.H., “Electron Emission from Cold Cathodes”, Mat. Res. Soc. Symp. Proc., Vol. 449, (Materials Research Society 1997) p 1127.Google Scholar
13 Pryor, R.W., Li, Lihua and Busta, H.H., “Sputtered Thin Film Boron Nitride Cold Emitters on Metal Substrates”, Proc. IEEE IEDM 97, p733.Google Scholar