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Characterization of Damage Induced by Cluster Ion Implantation

Published online by Cambridge University Press:  21 March 2011

Takaaki Aoki ,
Jiro Matsuo  and
Gikan Takaoka
Takaaki Aoki
Affiliation:
Osaka Science and Technology Center, Utsubo-honmachi, Nishi-ku, Osaka 550-0004, JAPAN Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606-8501, JAPAN
Jiro Matsuo
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606-8501, JAPAN
Gikan Takaoka
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606-8501, JAPAN
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Abstract

Molecular dynamics simulations of boron monomer and small clusters (B4 and B10) impacting on Si(001) were performed in order to investigate the damage formation by monomer/cluster impact. These monomer and clusters show similar implant depth and efficiency, but different damage structures. At the impact of B monomer with 230eV of incident energy, some point-defects such as vacancy-interstitial pairs are mainly formed. On the other hand B10 produces several times larger number of vacancies and interstitials compared with B1, This damage structure is different from one by B1 implantation and due to high yield amorphization of implanted region. This characteristic damage formation process is expected to cause different annihilation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J4.5
Copyright
Copyright © Materials Research Society 2001

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References

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