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Characterization of Pecvd Sin Films by Spectroscopic Ellipsometry

Published online by Cambridge University Press:  10 February 2011

Steven K. Brierley  and
Lan Nguyen
Steven K. Brierley
Affiliation:
Raytheon Advanced Device Center, 362 Lowell Street, Andover, MA 01810
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Abstract

Plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films deposited on both GaAs and Si substrates have been characterized by spectroscopic ellipsometry. The results indicate that such films consist of three constituents: Si3N4, voids, and amorphous silicon (α-Si). In addition, it is also observed that for typical deposition conditions there is an intervening layer of α-Si (on the order of 50–100 Å) between the nitride film and the semiconductor substrate. The thickness of this a-Si layer is found to depend on both the stoichiometry and the growth time of the nitride layer, leading to the conclusion that it is a result of excess Si diffusing from the growth surface through the nitride layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 145
Copyright
Copyright © Materials Research Society 1997

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