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Characterization of the Si/Diamond Interface

Published online by Cambridge University Press:  25 February 2011

K. E. Williams ,
J. S. Speck  and
M. D. Drory
K. E. Williams
Affiliation:
Department of Engineering Materials, University of California, Santa Barbara, CA; Crystallume, Menlo Park, CA.
J. S. Speck
Affiliation:
Department of Engineering Materials, University of California, Santa Barbara, CA; Crystallume, Menlo Park, CA.
M. D. Drory
Affiliation:
Department of Engineering Materials, University of California, Santa Barbara, CA; Crystallume, Menlo Park, CA.
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Abstract

Auger spectroscopy is used to determine the bonding states of carbon in the interfacial region between silicon and PECVD diamond films. SiC and sp2-hybridized carbon are observed. We suggest a possible growth sequence for diamond films to account for the interfacial layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 121
Copyright
Copyright © Materials Research Society 1992

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References

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