Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-15T06:49:40.813Z Has data issue: false hasContentIssue false
  • English
  • Français

A Comparative Study of the Reflectance Difference Spectrum from Si(001) Using Reflectance Difference Spectroscopy /Low-Energy Electron Diffraction/Scanning Tunneling Microscopy

Published online by Cambridge University Press:  15 February 2011

Jia-Ling Lin ,
S. G. Jaloviar ,
L. Mantese ,
D. E. Aspnes ,
L. McCaughan  and
M. G. Lagally
Jia-Ling Lin
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
S. G. Jaloviar
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
L. Mantese
Affiliation:
North Carolina State University, Raleigh, NC 27695
D. E. Aspnes
Affiliation:
North Carolina State University, Raleigh, NC 27695
L. McCaughan
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
M. G. Lagally
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
Get access

Abstract

From a comparative study using scanning tunneling microscopy, high-resolution lowenergy electron diffraction, and reflectance difference spectroscopy, we investigate the optical anisotropy on clean and H-covered Si(001) surfaces. We demonstrate a high sensitivity of reflectance difference spectroscopy to the surface tructural anisotropy and surface chemistry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 401
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Yasuda, T., Mantese, L., Rossow, U. and Aspnes, D.E., Phys. Rev. Lett. 74, 3431 (1995); A.R. Turner, M.E. Pemble, J.M. Fernandez, B.A. Joyce, J. Zhang and A.G. Taylor, Phys. Rev. Lett. 74, 3213 (1995).Google Scholar
[2] For a review of early RDS studies, see Aspnes, D.E., IEEE J. Quant. Electronis 25, 1056 (1989); see also W. Richter, Phil. Trans. R. Soc. Lond. A 344, 453 (1993).Google Scholar
[3] Shkrebtii, A.I. and Sole, R. Del, Phys. Rev. Lett. 70, 2645 (1993).Google Scholar
[4] Swartzentruber, B.S., Mo, Y.-W., Kariotis, R., Lagally, M. G. and Webb, M.B., Phys. Rev. Lett. 65, 1913 (1990); R. Kaplan, Surface Sci. 93, 145 (1980); B.S. Swartzentruber, N. Kitamura, M. G. Lagally and M.B. Webb, Phys. Rev. B 47, 13432 (1993).Google Scholar
[5] Alerhand, O.L., Berker, A. N., Joannopoulos, J.D., Vanderbilt, D., Hamers, R.J. and Demuth, J.E., Phys. Rev. Lett. 64, 2406 (1990); E. Pehlke and J. Tersoff, Phys. Rev. Lett. 67, 465 (1991).Google Scholar
[6] Kelly, M.K., Zollner, S. and Cardona, M., Surf. Sci. 285, 282 (1993).Google Scholar
[7] Aspnes, D.E., J. Vac. Sci. tech B 3, 1498 (1985); D.E. Aspnes and A.A. Studna, Phys. Rev. Lett. 54, 1956 (1985); C. Wijers, G. Poppe, P. de Boeji, H. Bekker and D. Wentink, Thin Solid Films 233, 28 (1993).Google Scholar
[8] Aumann, C.E., Miguel, J.J. de, Kariotis, R. and Lagally, M.G., Surf. Sci. 275, 1 (1992).Google Scholar
[9] Varshni, Y.P., Physica 34, 149 (1967).Google Scholar
[10] Vuye, G., Fisson, S., Nguyen Van, V., Wang, Y., Rivory, J. and Abelés, F., Thin Solid Films 233, 166–170 (1993).Google Scholar
[11] Mantese, L., Rossow, U. and Aspnes, D.E., 42nd National AVS Symposium, Oct. 16–20, 145 (1995).Google Scholar
[12] Sakurai, T. and Hagstrum, H.D., Phys. Rev. B 14, 1593 (1976); Y.J. Chabal and Krishnan Raghavachari, Phys. Rev. Lett. 54, 1055 (1985).Google Scholar