Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-10T11:51:46.459Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparative study of the structural and optical properties of CIS films prepared by RFmagnetron sputtering and selenization of elemental layers

Published online by Cambridge University Press:  21 March 2011

António F. Cunha ,
M.M. Pereira de Azevedo ,
Ricardo J.O. Ferrão ,
A.A.C.S. Lourenço  and
Claude Boemare
António F. Cunha
Affiliation:
Departamento de Física da Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
M.M. Pereira de Azevedo
Affiliation:
Departamento de Física da Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
Ricardo J.O. Ferrão
Affiliation:
Departamento de Física da Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
A.A.C.S. Lourenço
Affiliation:
Departamento de Física da Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
Claude Boemare
Affiliation:
Departamento de Física da Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
Get access

Abstract

We report on a study where the properties of films obtained by RF-magnetron sputtering and by Selenization of elemental precursor layers are analysed by Raman scattering, x-ray diffraction and optical measurements. Three routes were followed to prepare CIS films on glass. CIS type-I was prepared by selenization at various temperatures, CIS type-II was prepared by RF-magnetron sputtering on room temperature substrate followed by annealing at 450°C in air for 10 min and CIS type-III was prepared by RF-magnetron sputtering on a substrate at a temperature ranging from 200°C up to 500°C with a post-deposition annealing in the same conditions as for CIS type-II. Correlating the results from x-ray diffraction with the Raman scattering and optical measurements it was possible to establish unequivocally the formation of CIS with the chalcopyrite structure for CIS type-I at 400°C. Through the same procedure it was possible to establish a way to produce CIS type-II with the chalcopyrite structure. A high density of defects was inferred from the transmission results. Finally the growth dynamics of CIS type-III was studied. It was observed a structural/compositional transition around substrate temperature of 300°C. It was observed that all the films had a sphalerite structure even for the highest substrate temperatures. It was establish the need for a post-deposition annealing to obtain CIS type-III with the chalcopyrite structure. The Raman scattering was found to be a very sensitive technique that allowed us to uncover a difference in the CIS type-I and II with the chalcopyrite structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H8.18
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shock, H.W., Shah, A., Proc. of the 14th European Photovoltaics Solar Energy Conference, 2000, (1997).Google Scholar
2. Catalano, A., Solar Energy Materials and Solar Cells 41/42, 205 (1996)Google Scholar
3. Yamanaka, S., Tanda, M., Nakada, N., Yamada, A., Konagai, M., Takahashi, K., Jpn. J. Appl., 30, 442 (1991)Google Scholar
4. Shirakata, S., Kubo, H., Hamaguchi, C., Isomura, S., Jpn. J. Appl. Phys. 36, L1394 (1997)Google Scholar
5. Piekoszewski, J., Loferski, J.J., Beaulieu, R., at al., Solar Energy Materials 2, 363 (1980)Google Scholar
6. Alberts, V., Schön, J.H. and Bucher, E., J. Appl. Physics 84, 6881 (1998)Google Scholar
7. Martil, I., Santamaria, J. et al, J. Appl. Phys. 62, (10), 4163 (1987)Google Scholar