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Comparison of Computer Simulations with Measurements From a-Si:H Imaging Arrays.

Published online by Cambridge University Press:  21 February 2011

J. Yorkston ,
L.E. Antonuk ,
N. Seraji ,
J. Boudry ,
W. Huanga ,
E.J. Morton  and
R.A. Street
J. Yorkston
Affiliation:
Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109
L.E. Antonuk
Affiliation:
Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109
N. Seraji
Affiliation:
Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109
J. Boudry
Affiliation:
Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109
W. Huanga
Affiliation:
Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109
E.J. Morton
Affiliation:
Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109
R.A. Street
Affiliation:
Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109
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Abstract

The design and characterization of flat panel a-Si:H arrays for imaging applications in radiotherapy and diagnostic radiology has already begun. Future improvements in design and performance will be heavily reliant on the results of computer simulations capable of accurately predicting the behavior of the arrays in a variety of operating conditions. These results will allow the design of new arrays to be optimized for the particular application before they are committed to fabrication. This paper outlines the results of an investigation into the effects of varying a number of array parameters and operating conditions using a simulation code which models the operation of a-Si:H devices. The results are compared with actual measurements from arrays fabricated at Xerox PARC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1163
Copyright
Copyright © Materials Research Society 1992

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References

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