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Comparison of GaAs Metallization Systems for High Temperature Applications

Published online by Cambridge University Press:  22 February 2011

J. Scofield ,
S. Liu  and
S. Smith
J. Scofield
Affiliation:
Aero Propulsion & Power Directorate, Wright Laboratory, Wright Patterson Air Force Base, Dayton, Ohio 45433–6563
S. Liu
Affiliation:
University of Dayton Research Institute, Dayton Ohio 45469–0170
S. Smith
Affiliation:
Aero Propulsion & Power Directorate, Wright Laboratory, Wright Patterson Air Force Base, Dayton, Ohio 45433–6563
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Abstract

Transition metal-germanide/silicide based ohmic contact systems to n-type GaAs have been studied using current-voltage (I-V) and transmission line measurements (TLM). The effects of substituting various metals from groups IVB and VIB into the metallization stack have been compared, as well as the effects of using germanium or silicon. Rapid Thermal Annealing (RTA) was used to facilitate the reactions. Titanium and molybdenum were shown to be more effective metallizations than chromium, even though chromium readily forms a silicide or germanide. Germanium has been found to produce an ohmic contact of low resistivity, while metallization with silicon alone does not show ohmic behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 247
Copyright
Copyright © Materials Research Society 1993

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References

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