Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-15T07:10:21.391Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of the Processes Induced by Mercury Lamp and ArF Excimer Laser Photoassisted CVD of a-Si:H Films

Published online by Cambridge University Press:  28 February 2011

C. Fuchs  and
E. Fogarassy
C. Fuchs
Affiliation:
Centre de Recherches Nucléaires – Laboratoire PHASE 23, Rue du Loess F-67037 STRASBOURG, France
E. Fogarassy
Affiliation:
Centre de Recherches Nucléaires – Laboratoire PHASE 23, Rue du Loess F-67037 STRASBOURG, France
Get access

Abstract

We compare, in this study, the photoassisted processes for silicon deposition using both a low pressure mercury lamp and an ArF excimer laser for the specific case where the SiH4 gas is sealed in the reaction chamber.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 195
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Niki, H., Mains, G.J., J. Phys. Chem. 68, 304 (1964)CrossRefGoogle Scholar
2. Saitoh, T., Muramatsu, S., Matsubara, S., Migitaka, M., Appl. Phys. Lett. 42, 678 (1983); T. Inoue, M. Konagai, K. Takahashi, Appl. Phys. Lett. 43, 774 (1983).Google Scholar
3. Hirose, M., roc. of SERI/DOE Annual Review Meeting (Washington 1985) p. 26.Google Scholar
4. Kenne, J., Yamada, A., Konagai, M., Takahashi, K., Jpn Jour. of Appl. Phys. 24, 997 (1985).Google Scholar
5. Nishida, S., Tasaki, H., Konagai, M., Takahashi, K., J. Appl. Phys. 58, 1427 (1985).Google Scholar
6. Andreatta, R.W., Abele, C.C., Osmundsen, J.F., Eden, J.G., Lubben, D. and Greene, J.E., Appl. Phys. Lett. 40, 183 (1982).CrossRefGoogle Scholar
7. Murahara, M., Toyoda, K., In Laser Processing and Diagnostics V39, edited by Bauerle, D. (Springer Verlag, Berlin, 1984) p. 252.Google Scholar
8. Yamada, A., Konagai, M., Takahashi, K., Extended Abstract : Laser Chemical Processing of Semiconductor Device, presented at the 1984 MRS Meeting, Boston, p. 29.Google Scholar
9. Zarnani, H., Demiryont, H., Collins, G.J., J. Appl. Phys. 60, 2523 (1986); K. Suzuki, D. Lubben and J.E. Greene, J. Appl. Phys. 58, 979 (19–85).Google Scholar
10. Yoshikawa, A., Yamaga, S., Jpn Jour. of Appl. 23, L91 (1984).CrossRefGoogle Scholar
11. Carlson, D.E. and Wronski, C.R., Amorphous Semiconductors, edited by Brodsky, M.H. (Springer Verlag, Berlin, 1979), p. 294.Google Scholar
12. Cody, G.D., Wronski, C.R., Abeles, B., Stephens, R.B. and Brooks, B., Solar Cells 2, 227 (1980).Google Scholar
13. Cody, G.D., Semiconductors and Semimetals, edited by Pankove, J.I. (Academic Press, 1984) V.21 (B), p. 11.Google Scholar
14. Perrin, J., Broekhuizen, T., Benfehrat, R., In Laser Processing and Diagnostics II, edited par Bauerle, D., Kompa, K.L., Laude, L., Les Editions de Physique (1986) p. 129.Google Scholar
15. Mutsukura, N., Machi, Y., Appl. Phys. B41, 103 (1986).CrossRefGoogle Scholar
16. Harada, Y., Murrell, J.N., Sheena, H.H., Chem. Phys. Lett. 1, 595 (1968).Google Scholar
17. Perkins, G.G.A., Austin, E.R., Lampe, F.W., J. of Am. Chem. Soc. 28, 1109 (1979).Google Scholar
18. Perrin, J., Thesis, Université Paris VII, 1983.Google Scholar