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Composition and Electrode Effects on the Electrical Properties of SrBi2Ta2O9

Published online by Cambridge University Press:  10 February 2011

Darin T. Thomas ,
Norifumi Fujimura ,
S. K. Streiffer  and
Angus I. Kingon
Darin T. Thomas
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC
Norifumi Fujimura
Affiliation:
Osaka Prefecture University, Osaka, Japan
S. K. Streiffer
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC
Angus I. Kingon
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC
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Abstract

SrBi2Ta2O9 has attracted great interest for non-volatile memory applications due to its minimal polarization fatigue. This paper describes systematic studies, using pulsed laser deposition, on the effect of deposition conditions on the Bi-Pt reaction and on the potential for low temperature processing. Changing the deposition temperature (Ts) and oxygen gas pressure during deposition can control the Bi content in the films. At a Ts of 600°C, the films have excess Bi and do not fully crystallize to SBT, resulting in poor remnant polarization (Pr). These films consist mostly of the pyrochlore phase, plus a small amount of disordered, c-oriented layered perovskite SBT. By annealing over 750°C, the films show improved Pr, but further Pt - Bi interactions occur. At a Ts of 700°C, the as-deposited films are fully crystallized and show saturated hysteresis loops. However, Bi deficiency through alloying results in reduced remnant polarization (2Pr = 7.0μC/cm2). Films on Ir/Pt show reduced electrode reactions and improved properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 153
Copyright
Copyright © Materials Research Society 1998

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References

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