Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-15T06:56:14.925Z Has data issue: false hasContentIssue false
  • English
  • Français

Conductivity Measurements on GaN Grown by OMVPE and HVPE

Published online by Cambridge University Press:  21 February 2011

M. Ben-Chorin ,
J. Diener ,
B.K. Meyer ,
M. Drechsler ,
D. Volm ,
H. Amano ,
I. Akasaki ,
T. Detchprohm  and
K. Hiramatsu
M. Ben-Chorin
Affiliation:
Technical University, Munich, Department of Physics, 85747 Garching, Germany
J. Diener
Affiliation:
Technical University, Munich, Department of Physics, 85747 Garching, Germany
B.K. Meyer
Affiliation:
Technical University, Munich, Department of Physics, 85747 Garching, Germany
M. Drechsler
Affiliation:
Technical University, Munich, Department of Physics, 85747 Garching, Germany
D. Volm
Affiliation:
Technical University, Munich, Department of Physics, 85747 Garching, Germany
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
T. Detchprohm
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furocho, Chikusa-ku, Nagoya 468-01, Japan
K. Hiramatsu
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furocho, Chikusa-ku, Nagoya 468-01, Japan
Get access

Abstract

We report on conductance and cyclotron resonance (CR) experiments on GaN epitaxial films grown by the OMVPE and HVPE techniques. From a precise determination of the electron effective mass the donor binding energy in the effective mass approximation (EMT) is calculated. We obtain 31.7 meV. The transport experiments on the HVPE films show that the conductance is thermally activated with an activation energy of 15 meV in contrast to the OMVPE films which showed temperature independent conductivity for temperatures between 4 and 100 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 467
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B10, 1237 (1992)Google Scholar
2 Neugebauer, J. and Van de Walle, C.G., Phys. Rev. B 50, 8067 (1994)Google Scholar
3 Boguslakski, P., Biggs, E. and Bernholc, J., Phys. Rev. B 51,17255 (1995)Google Scholar
4 Molnar, R.J., Lei, T. and Moustakas, T.D., Appl. Phys. Lett. 62, 72 (1993)Google Scholar
5 Illegems, M. and Montgomery, H.C., J. Phys. Chem. Solids 34, 885 (1973)Google Scholar
6 Drechsler, M., Hofmann, D.M., Meyer, B.K., Detchprohm, T., Amano, A. and Akasaki, I., Jpn. J. Appl. Phys. 34, L1178 (1995)Google Scholar
7 Meyer, B.K., Volm, D., Graber, A., Alt, H.C., Detchprohm, T., Amano, H. and Akasaki, I., Solid State Comm. 95, 597 (1995)Google Scholar
8 Blakemore, J.S., Semiconductor Statistics, Pergamon, Oxford 1962 Google Scholar
9 Hoffmann, A., private communicationGoogle Scholar
10 Amano, H., private communicationGoogle Scholar
11 Monemar, B. and Samuelson, L., Solid State Commun. 26, 165 (1978)Google Scholar