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Contact Characterizations of ZrN Thin Films Obtained by Reactive Sputtering

Published online by Cambridge University Press:  01 February 2011

Joshua Pelleg ,
Asaf Bibi  and
Michael Sinder
Joshua Pelleg
Affiliation:
pelleg@bgumail.bgu.ac.il, Ben Gurion University of the Negev, Materials Engineering, Ben Gurion Str., Beer Sheva, 84105, Israel, 972 8 646 1823, 972 8 647 2946
Asaf Bibi
Affiliation:
bibias@bgu.ac.il, Ben Gurion University of the Negev, Materials Engineering, Beer Sheva, 84105, Israel
Michael Sinder
Affiliation:
micha@bgu.ac.il, Ben Gurion University of the Negev, Materials Engineering, Beer Sheva, 84105, Israel
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Abstract

The contact properties of ZrN on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diodes characteristics were evaluated by current-voltage (I-V) and capacitance voltage (C-V) measurements. The barrier heights obtained by I-V and C-V are in the range of 0.55-0.63V and 0.88-0.91V, respectively.

Keywords

electrical propertiesbarrier layernitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007 , 1040-Q09-04
Copyright
Copyright © Materials Research Society 2008

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