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Contact Resistivity and Dopant Activation in Pulsedlaser-Annealed Au-Ge/GaAs Contacts

Published online by Cambridge University Press:  15 February 2011

O. Aina ,
W. Katz  and
K. Rose
O. Aina*
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY 12309, (U.S.A.)
W. Katz
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY 12309, (U.S.A.)
K. Rose
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12181, (U.S.A.)
*
† Present address: Bendix Advanced Technology Center, 9140 Old Annapolis Road, MD 108, Columbia, MD 21045, U.S.A.
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Abstract

The electrical activation of dopants in the heavily doped GaAs layers of pulsedlaser-annealed Au–Ge/GaAs contacts were deduced and shown to be higher than that in bulk GaAs. The electrical activation is shown to decrease towards the GaAs surface and is used to explain the previously observed minimum in contact resistivity profiles in terms of arsenic loss during the laser annealing. These results will be shown to be consistent with observations of concentration–dependent activation in bulk GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 403
Copyright
Copyright © Materials Research Society 1982

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References

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