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Controlled growth of nanowires using annealing and pulsed laser deposition

Published online by Cambridge University Press:  01 February 2011

Hyun D. Park  and
Timothy P. Hogan
Hyun D. Park
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824–1226
Timothy P. Hogan
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824–1226
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Abstract

A new nanowire growth technique using annealing and pulsed laser deposition is described. The technique demonstrates the control in the precise nanowire growth temperature thereby yielding higher quality nanowires than obtained from simple annealing alone. InSb substrate and gold target were used to demonstrate the new technique. The results from the variation of gold deposits from 2.5 mins to 40 mins at the fixed growth temperature of 510 °C are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 849: Symposium KK – Kinetics-Driven Nanopatterning on Surfaces , 2004 , KK5.8
Copyright
Copyright © Materials Research Society 2005

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References

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