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Cross sectional Tem Sample Preparation Using E-Beam Lithography and Reactive ion Etching

Published online by Cambridge University Press:  10 February 2011

Hyun-Jin Cho ,
Peter B. Griffin  and
James D. Plummer
Hyun-Jin Cho
Affiliation:
Center for Integrated Systems, Stanford, CA 94305, hjcho@leland.stanford.edu
Peter B. Griffin
Affiliation:
Center for Integrated Systems, Stanford, CA 94305, hjcho@leland.stanford.edu
James D. Plummer
Affiliation:
Center for Integrated Systems, Stanford, CA 94305, hjcho@leland.stanford.edu
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Abstract

A simple method to make cross sectional TEM samples of Si and GaAs semiconductor devices at specific device locations using electron beam (e-beam) lithography and reactive ion etching is described. The basic idea of this technique is to form pillar or line type patterns thin enough to be transparent to electron beams used in transmission electron microscopy. Since the entire process is conducted in the semiconductor fabrication facility, reliable samples were efficiently obtained within a short time without mechanical polishing or ion milling. High Resolution Electron Microscopy (HREM) images of SiGe and GaAs multilayer structures were obtained by this method. Using the alignment function of the e-beam lithography system, cross sectional TEM samples at specific locations of MOS transistors were obtained. The samples were thin enough to obtain HREM images of atomic level defects in the device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 480: Symposium Z – Specimen Preparation for Transmission Electron Microscopy…IV , 1997 , 217
Copyright
Copyright © Materials Research Society 1997

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