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Crystal Structure and Texture Effects on Piezoelectric and Dielectric Properties of PZT Thin Films

Published online by Cambridge University Press:  10 February 2011

D. Damjanovic ,
D. V. Taylor  and
N. Setter
D. Damjanovic
Affiliation:
Ceramics Laboratory, Materials Department, Swiss Federal Institute of Technology - EPFL, 1015 Lausanne, Switzerland, dragan.damjanovic@epfl.ch
D. V. Taylor
Affiliation:
Ceramics Laboratory, Materials Department, Swiss Federal Institute of Technology - EPFL, 1015 Lausanne, Switzerland, dragan.damjanovic@epfl.ch
N. Setter
Affiliation:
Ceramics Laboratory, Materials Department, Swiss Federal Institute of Technology - EPFL, 1015 Lausanne, Switzerland, dragan.damjanovic@epfl.ch
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Abstract

A systematic investigation of the piezoelectric and dielectric properties of Pb(Zr1-xTix,)O3 (PZT) thin films fabricated by chemical solution deposition was carried out for rhombohedral (x= 0.40), tetragonal (x=0.55) and morphotropic (x=0.47) composition. Each composition was grown with three different crystallographic orientations (textures): “random”, (111) and (100). Nonlinearity (field dependence) of d33 piezoelectric coefficient and dielectric permittivity of the films was studied in detail under subswitching conditions to reveal domain-wall related contributions to the properties. After analyzing for each texture and composition the domain-wall structure, contributions due to domain-wall displacements, and effects of film clamping by the substrate a consistent interpretation of the electro-mechanical properties and nonlinear behavior was proposed. The (100) oriented rhombohedral films show the largest piezoelectric coefficient (intrinsic effect) but limited nonlinearity (domain-wall structure effect) and should therefore be considered as potential candidates for piezoelectric devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 529
Copyright
Copyright © Materials Research Society 2000

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