Hostname: page-component-6bf8c574d5-xtvcr Total loading time: 0 Render date: 2025-02-22T16:42:13.572Z Has data issue: false hasContentIssue false
  • English
  • Français

CuPt Ordering Signatures of Phonons in GaInP2

Published online by Cambridge University Press:  10 February 2011

F. Alsina ,
H. M. Cheong ,
N. Mestres ,
J. Pascual  and
A. Mascarenhas
F. Alsina
Affiliation:
Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
H. M. Cheong
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
N. Mestres
Affiliation:
Institut de Ciència de Materials de Barcelona (CSIC), 08193 Bellaterra, Spain
J. Pascual
Affiliation:
Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
A. Mascarenhas
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Get access

Abstract

We present a comprehensive overview of the large spectroscopic evidence on the influence of ordering on the Raman and infrared spectra of partially ordered GaInP2. Our phonon mode calculation within the adiabatic bond charge model describes the appearance of new phonons and also the optical anisotropy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 223
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

†

Present address: Dept. of Physics, Sogang University, Seoul, Korea

References

REFERENCES

1.Zunger, A. A. and Mahajan, S., in Handbook of Semiconductors, 2nd ed., edited by Mahajan, S. (Elsevier, Amsterdam 1994), Vol.3, p. 1399.Google Scholar
2.Kondow, M. and Minagawa, S., J. Appl. Phys. 64, 793 (1988).Google Scholar
3.Suzuki, T., Gomyo, A., lijima, S., Kobayashi, K., Kawata, S., Hino, I., and Yuasa, T., Jpn. J. Appl. Phys. 27, 2098 (1988).Google Scholar
4.Alsina, F., Mestres, N., Pascual, J., Geng, C., Ernst, P., and Scholz, F., Phys. Rev. B 53, 12994 (1996).Google Scholar
5.Mintairov, A. M. and Melehin, V. G., Semicond. Sci. Technol. 11, 904 (1996).Google Scholar
6.Hassine, A., Sapriel, J., Berre, P. Le, Forte-Poisson, M. A. Di, Alexandre, F., and Quillec, M., Phys. Rev. B 54, 2728 (1996).Google Scholar
7.Mestres, N., Alsina, F., Pascual, J., Bluet, J. M., Camassel, J., Geng, C., and Scholz, F., Phys. Rev. B 54, 17754 (1996).Google Scholar
8.Cheong, H. M., Mascarenhas, A., Ernst, P., and Geng, C., Phys. Rev. B 56, 1882 (1997).Google Scholar
9.Cheong, H. M., Alsina, F., Mascarenhas, A., Geisz, J. F., and Olson, J. M., Phys. Rev. B 56, 1888 (1997).Google Scholar
10.Alsina, F., Cheong, H. M., Webb, J. D., Mascarenhas, A., Geisz, J. F., and Olson, J. M., Phys. Rev. B 56, 13126 (1997).Google Scholar
11.Alsina, F., Webb, J. D., Mascarenhas, A., Geisz, J. F., Olson, J. M., and Duda, A., Phys. Rev. B 60, 1484 (1999).Google Scholar
12.Ozolins, V. and Zunger, A., Phys. Rev. B 57, R9404 (1998).Google Scholar
13.Loudon, R., Adv. Phys. 13, 423 (1964).Google Scholar
14.Lucovsky, G., Brodsky, M. H., Chen, M. F., Chicotka, R. J., and Ward, A. T., Phys. Rev. B 4, 1945 (1971).Google Scholar
15.Jahne, E., Pilz, W., Giehler, M., and Hildish, L., Phys. Stat. Sol. B 91, 155 (1979).Google Scholar
16.Jusserand, B. and Slempkes, S., Solid State Commun. 49, 95 (1984).Google Scholar
17.Alsina, F., Mestres, N., Nakhli, A., and Pascual, J., Phys. Stat. Sol. B 215, 121 (1999).Google Scholar
18.Weber, W., Phys. Rev. B 15, 4789 (1977).Google Scholar
19.Yip, S. K. and Chang, Y. C., Phys. Rev. B 30, 7037 (1984).Google Scholar
20.Pletd, T., Pavone, P., Sinzinger, M., and Strauch, D., in Proceedings of the 24th International Conference on the Physics of Semiconductors, edited by Gershoni, D. (World Scientific, Singapore).Google Scholar
21.Zhang, Y., Fluegel, B., Mascarenhas, A., Geisz, J. F., Olson, J. M., Alsina, F., and Duda, A., Solid State Commun. 104, 577 (1997).Google Scholar
22.Alsina, F., Garriga, M., Alonso, M. I., Pascual, J., Camassel, J., and Glew, R. W., in Proceedings of the 22nd International Conference on the Physics of Semiconductors, edited by Lockwood, D. J. (World Scientific, Singapore, 1995), p. 253.Google Scholar