Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-10T10:23:46.673Z Has data issue: false hasContentIssue false

Current Transport Mechanisms in CuIn1−xGaxSe2 and CIS Thin-Film Solar Cells on Flexible Stainless Steel Substrates

Published online by Cambridge University Press:  21 March 2011

Gaurav A. Naik
Affiliation:
University at BuffaloState University of New York Electrical Engineering Department Buffalo, NY 14260
Wayne A. Anderson
Affiliation:
University at BuffaloState University of New York Electrical Engineering Department Buffalo, NY 14260
Get access

Abstract

Copper indium gallium selenide (CIGS) solar cells on thin film stainless steel substrates were evaluated by current-voltage-temperature (IVT) from 150K-350K to determine current transport mechanisms. Both dark and photo data at reverse and low forward voltages exhibited tunneling-like behavior. At intermediate forward voltages, diffusion or thermionic emission are suggested by an ideality factor close to 1.0. At higher currents and voltages there is a trend towards recombination or space change limited behavior.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Birkmire, R.W., Proceedings of 26th IEEE PVSC, Anaheim, CA, Sept. 30-Oct. 3, 1997, pp. 295300.Google Scholar
2. Yi, J., “Properties and Applications of Thin Film Amorphous and Microcrystalline Silicon,” Ph.D. Dissertation, SUNY at Buffalo, Feb. 1994.Google Scholar
3. Moorthy, R., Partain, LD., Okubo, D. and Henderson, D., IEDM Technical Digest, 442445, (1979).Google Scholar
4. Partain, L.D., J. Appl. Phys., 61 (12), 54585466, (1987).Google Scholar
5. Partain, L.D., Virshup, G.F. and Kaminar, N.R., Proc. 20th IEEE PVSC, 759763, (1988).Google Scholar
6. Yalcin, N., Saffar, I.S. and Tomlinson, R.D., J. Appl. Phys., 52 (9), 58575858, (1981).Google Scholar
7. Hernandez, E., Cryst. Res. Tech., 32 (2), 285289, (1998).Google Scholar
8. Tomita, Y., Kawai, T. and Hatanaka, Y., Jpn. J. Appl. Phys., 32, 19231928, (1993).Google Scholar
9. Partain, L.D., Armantrout, G.A. and Leong, J., J. Electronic Mat., 9 (3), 467484, (1980).Google Scholar