Hostname: page-component-6bf8c574d5-gr6zb Total loading time: 0 Render date: 2025-02-22T17:06:21.090Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep Luminescence from ‘Relaxed’ Si1−xGex Epitaxial Layers

Published online by Cambridge University Press:  22 February 2011

Gordon Davies ,
Victor Higgs ,
Richard Kubiak ,
Adrian Powell ,
Terry Whall  and
Evan Parker
Gordon Davies
Affiliation:
Department of Physics, King's College London, Strand, London WC2R 2LS, UK
Victor Higgs
Affiliation:
Department of Physics, King's College London, Strand, London WC2R 2LS, UK
Richard Kubiak
Affiliation:
Department of Physics, Warwick University, Coventry CV4 7AL, UK
Adrian Powell
Affiliation:
Department of Physics, Warwick University, Coventry CV4 7AL, UK
Terry Whall
Affiliation:
Department of Physics, Warwick University, Coventry CV4 7AL, UK
Evan Parker
Affiliation:
Department of Physics, Warwick University, Coventry CV4 7AL, UK
Get access

Abstract

In MBE Si1−xGex which is grown to thicknesses greater than the critical thickness hc, the dislocation-related luminescence peaks Dl and D2 have energies which are independent of x up to x ≈ 0.3, and then decrease, as observed in LPE Si1−xGex. In MBE Si1−xGex layers grown to thicknesses less than hc, post-growth annealing produces dramatic changes in the luminescence, giving spectra as from relaxed alloy, even though the relaxation determined by X-rays is negligible. These results establish photoluminescence as a sensitive diagnostic tool for detecting dislocations in Si1−xGe*.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 321
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See, e.g. Sturm, J. C., Manoharan, H., Lenchyshyn, L. C., Thewalt, M. L. W., Rowell, N. L., Noël, J. -P. and Houghton, D. C., Phys. Rev. Lett. 66, 1362 (1991);Google Scholar
Terashima, K., Tajima, M. and Tatsumi, T., Appl. Phys. Lett. 57, 1925 (1990).Google Scholar
2. People, R. and Bean, J. C., Appl. Phys. Lett. 47, 322 (1985); Appl. Phys. Lett. 49, 229 (1986);Google Scholar
Fiory, A. T., Bean, J. C., Feldan, L. C. and Robinson, I. K., J. Appl. Phys. 56, 980 (1984).Google Scholar
3. Hauenstein, R. J., Miles, R. H., Croke, E. T. and McGill, T. C., Thin Solid Films 183, 79 (1989).Google Scholar
4. Hull, R., Bean, J. C., Eaglesham, D. J., Bonar, J. M. and Buescher, C., Thin Solid Films 183, 117 (1989).Google Scholar
5. Perovic, D. D., Weatherly, G. C., Baribeau, J. -M. and Houghton, D. C., Thin Solid Films 183, 141 (1989).CrossRefGoogle Scholar
6. Higgs, V., Kightley, P., Augustus, P. D. and Goodhew, P. J., Appl. Phys. Lett. (1991) in press.Google Scholar
7. Sauer, R., Weber, J., Stolz, J., Weber, E. R., Küsters, K. -H. and Alexander, H., Appl. Phys. A36, 1 (1985).Google Scholar
8. Kolyubakin, A. I., Osip'yan, Yu. A., Shevchenko, S. A. and Shteinman, É. A., Sov. Phys. Solid State 26, 407 (1984).Google Scholar
9. Higgs, V., Lightowlers, E. C. and Kightley, P., Mat. Res. Symp. Proc. 163, 57 (1990);Google Scholar
Weronek, K. and Weber, J., Proc. POLYSE'90, in press.Google Scholar
10. Rebane, Yu. T. and Shreter, Yu. G., ‘Dislocation-related excitons in semiconductors’, to be published.Google Scholar
11. Weber, J. and Alonso, M. I., Int. Coni. Sci. and Technol. of Defect Control in Semiconductors, Yokohama, 1989.Google Scholar
12. Davies, G., Phys. Rep. 176, 83 (1989).Google Scholar
13. Suezawa, M., Sasaki, Y. and Sumino, K., Phys. Stat. Sol. a79, 173 (1983).Google Scholar
14. Higgs, V., Lightowlers, E. C., van de Walle, G. F. A., Gravesteijn, D. J. and Montie, E. A., submitted for publication (1991).Google Scholar
15. Fritz, I. J., Gourley, P. L. and Dawson, L. R., Appl. Phys. Lett. 51, 1004 (1987).Google Scholar