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Defect Distribution and Defect Kinetics in Undoped and Boron-Doped A-Si:H Investigated by Modulated Photocurrents

Published online by Cambridge University Press:  25 February 2011

G. Schumm  and
G. H. Bauer
G. Schumm
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Federal Republik of Germany
G. H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Federal Republik of Germany
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Abstract

Gap state profiles in a-Si:H around the Fermi energy have been determined by phase shift analysis of modulated photocurrents. Measurements on different samples in various light-soaked and annealed states show a general strong correlation of the defect structure with the Fermi level position, with a minimum in the DOS at Ef and a peak above Ef. A model of the defect structure involving a peak of D+ states above Ef is outlined that accounts for the observed correlations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 327
Copyright
Copyright © Materials Research Society 1989

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References

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