Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-15T02:12:32.296Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Generation And Evolution In The Hydrothermal Growth Of Epitaxial BaTiO3 Thin Films

Published online by Cambridge University Press:  15 February 2011

L. Zhao ,
A. T. Chien ,
F. F. Lange  and
J. S. Speck
L. Zhao
Affiliation:
Materials Research Laboratory and Materials Department, University of California, Santa Barbara, CA 93106
A. T. Chien
Affiliation:
Materials Research Laboratory and Materials Department, University of California, Santa Barbara, CA 93106
F. F. Lange
Affiliation:
Materials Research Laboratory and Materials Department, University of California, Santa Barbara, CA 93106
J. S. Speck
Affiliation:
Materials Research Laboratory and Materials Department, University of California, Santa Barbara, CA 93106
Get access

Abstract

The structure of epitaxial BaTiO3 thin films prepared by hydrothermal synthesis on (001) SrTiO3 substrates was studied by transmission electron microscopy (TEM). The growth evolution was followed from initial island formation, through island impingement and fusion. Plan view and cross-section imaging demonstrated that the films grew by an unusual islanding mechanism. Electron diffraction showed the islands and the fully formed film are single crystal with mosaic character and in all cases strain relaxed. Cross-section TEM of the early growth films showed a several monolayer thick interfacial layer and the film/substrate region had no misfit dislocations. In the fully formed films, this interfacial layer was not observed, however a clear misfit dislocation network was observed. Defects analysis shows that the misfit dislocations have pure edge character with <100> Une directions, and <010> Burgers vectors (parallel to the film/substrate interface).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 474: Symposium L – Epitaxial Oxide Thin Films III , 1997 , 55
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wilson, J.M., Bull. Am. Ceram. Soc, 74 (6), 106 (1995).Google Scholar
2. Kajiyoshi, K., Ishizawa, N., and Yoshimura, M., Jpn. J. Appl. Phys., 30, L120 (1991).Google Scholar
3. Chien, A.T., Speck, J.S., Lange, F.F., Daykin, A., and Levi, C., J. Mater. Res., 10, 1784 (1995).Google Scholar
4. Bacsa, R.R., Dougherty, J.P., and Pilione, L.J., Appl. Phys. Lett., 63, 1053 (1993).Google Scholar
5. Wu, W., Zheng, L., Xin, H., Lin, C. and Okuyama, M., J. Electrochem. Soc, 143, 1133 (1996).Google Scholar
6. Slamovich, E.B. and Aksay, I.A., J. Am. Ceram. Soc, 79, 239 (1996).Google Scholar
7. Chien, A.T., Zhao, L., Speck, J.S. and Lange, F. F., submitted to J. Mater. Res. Google Scholar
8. Zhao, L., Chien, A.T., Lange, F.F., and Speck, J.S., J. Mater. Res., 11, 1325 (1996).Google Scholar
9. Matthews, J. W., Epitaxial Growth, Academic Press (1975), Chap 8.Google Scholar
10. Yagi, K., Takayanagi, K., and Honjo, G., Thin Solid Films, 44, 121 (1977).Google Scholar
11. Doukhan, N. and Doukhan, J. C, Phys Chem. Minerals, 13, 403 (1986).Google Scholar