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Defect Relaxation in Disordered Materials: Stretched Exponentials, Meyer-Neldel Rule, and Staebler-Wronski Effect

Published online by Cambridge University Press:  25 February 2011

Richard S. Crandall
Richard S. Crandall*
Affiliation:
SERI, Golden CO 80401
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Abstract

Using an exponential distribution of activation barriers, annealing data for metastable effects in hydrogenated amorphous silicon, a-Si:H, are quantitatively explained. This includes the stretched exponential time dependence of annealing and a Meyer-Neldel rule for the annealing time constant. An exponential distribution of annealing energies arises because defects are frozen in during growth at high temperature. Mechanisms that lead to an exponential distribution of annealing energies are weak bond-breaking and charge trapping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 589
Copyright
Copyright © Materials Research Society 1989

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References

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