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Demonstration of Improved Quantitative Mobility Spectrum Analysis (i-QMSA)

Published online by Cambridge University Press:  10 February 2011

I. Vurgaftman ,
J. R. Meyer ,
C. A. Hoffman ,
D. Redfern ,
J. Antoszewski ,
L. Faraone  and
J. R. Lindemuth
I. Vurgaftman
Affiliation:
Code 5613, Naval Research Laboratory, Washington, DC 20375
J. R. Meyer
Affiliation:
Code 5613, Naval Research Laboratory, Washington, DC 20375
C. A. Hoffman
Affiliation:
Code 5613, Naval Research Laboratory, Washington, DC 20375
D. Redfern
Affiliation:
Dept. of Electrical Engineering, University of Western Australia, Nedlands, WA 6009
J. Antoszewski
Affiliation:
Dept. of Electrical Engineering, University of Western Australia, Nedlands, WA 6009
L. Faraone
Affiliation:
Dept. of Electrical Engineering, University of Western Australia, Nedlands, WA 6009
J. R. Lindemuth
Affiliation:
Lake Shore Cryotronics, Inc., Westerville, OH
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Abstract

We discuss an improved quantitative mobility spectrum analysis (i-QMSA) of magnetic-field-dependent Hall and resistivity data, which can determine multiple electron and hole densities and mobilities. A fully automated computer implementation of i-QMSA is applied to a variety of synthetic and real data sets. The results show that the new algorithm increases the information available from a given data set and is suitable for use as a standard tool in the characterization of semiconductor materials and devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 245
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Meyer, J. R., Hoffman, C. A., Bartoli, F. J., Arnold, D. J., Sivananthan, S., and Faurie, J. P., Semicond. Sci. Technol. 8, 805 (1993).Google Scholar
[2] Hárman, T. C., Honig, J. M., and Trent, P., J. Phys. Chem. Sol. 28, 1995 (1967).Google Scholar
[3] Meyer, J. R., Hoffman, C. A., Antoszewski, J., and Faraone, L., J. Appl. Phys. 81, 709 (1997).Google Scholar
[4] Beck, W. A. and Anderson, J. R., J. Appl. Phys. 62, 541 (1987).Google Scholar
[5] Dziuba, Z. and Gorska, M., J. Phys. III France 2, 99 (1992).Google Scholar
[6] Kim, J. S., Seiler, D. G., and Tseng, W. F., J. Appl. Phys. 73, 8324 (1993).Google Scholar
[7] Antoszewski, J., Seymour, D. J., Faraone, L., Meyer, J. R., and Hoffman, C. A., J. Electron. Mater. 24, 1255 (1995).Google Scholar