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Demonstration of Multiprocessing by Silicon Epitaxy Following In-Situ Cleaning

Published online by Cambridge University Press:  28 February 2011

Pushkar P. Apte ,
Ramnath Venkatraman ,
Krishna C. Saraswat ,
Mehrdad M. Moslehi  and
Richard Yeakley
Pushkar P. Apte
Affiliation:
Stanford University, Stanford, CA 94305
Ramnath Venkatraman
Affiliation:
Stanford University, Stanford, CA 94305
Krishna C. Saraswat
Affiliation:
Stanford University, Stanford, CA 94305
Mehrdad M. Moslehi
Affiliation:
Texas Instruments, Dallas, TX 75265
Richard Yeakley
Affiliation:
Texas Instruments, Dallas, TX 75265
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Abstract

Conventional semiconductor manufacturing techniques may be unable to meet technological demands in certain cases, and alternatives need to be investigated. We propose in situ sequential processing, which we define as ‘multiprocessing’, as a possible innovation. We demonstrate a specific manifestation of multiprocessing, namely the integration of a novel in situ pre-clean using anhydrous hydrogen fluoride with chemical vapor deposition of silicon, leading to the growth of high-quality single-crystal silicon epitaxy. Further, we show that the multiprocessing technology is viable for manufacturing, since it is simple, rapid, has a low thermal budget and does not suffer from cross-contamination. Finally, we discuss the possible role of multiprocessing in semiconductor manufacturing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 273
Copyright
Copyright © Materials Research Society 1991

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References

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