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Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors after Plasma Passivation

Published online by Cambridge University Press:  01 February 2011

Cheng-Ming Yu ,
Tiao-Yuan Huang ,
Tan-Fu Lei  and
Horng-Chih Lin
Cheng-Ming Yu
Affiliation:
Institute of Electronics, National Chiao Tung University, 1001Ta-Hsueh Road, Hsinchu, Taiwan, ROC.
Tiao-Yuan Huang
Affiliation:
Institute of Electronics, National Chiao Tung University, 1001Ta-Hsueh Road, Hsinchu, Taiwan, ROC.
Tan-Fu Lei
Affiliation:
Institute of Electronics, National Chiao Tung University, 1001Ta-Hsueh Road, Hsinchu, Taiwan, ROC.
Horng-Chih Lin
Affiliation:
National Nano Device Labs, 1001-1 Ta-Hsueh Road, Hsinchu, Taiwan, 30050, R.O.C.
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Abstract

The effects of NH3 and H2 plasma passivation on the characteristics of poly-Si thin-film transistors with source/drain extensions induced by a bottom sub-gate were studied. Our results show that significant improvements in device performance can be obtained by both passivation methods. Moreover, NH3-plasma-treatment appears to be more effective in reducing the off-state leakage, subthreshold swing, compared to H2 plasma passivation. NH3 plasma treatment is also found to be more effective in reducing the anomalous subthrehold hump phenomenon observed in non-plasma-treated short-channel devices. Detailed analysis suggests that all these improvements can be explained by the more effective passivation of the traps distributed in both the front and back sides of the channel by NH3 plasma treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A18.8
Copyright
Copyright © Materials Research Society 2003

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