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Deposition Of BaTiO3 Thin Films And MgO Buffer Layers On Patterned GaAs Substrates For Integrated Optics Applications

Published online by Cambridge University Press:  01 February 2011

Ding-Yuan Chen ,
Timothy E. Murphy  and
Jamie D. Phillips
Ding-Yuan Chen
Affiliation:
Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A. Email: dingyuan@umich.edu
Timothy E. Murphy
Affiliation:
Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A. Email: dingyuan@umich.edu
Jamie D. Phillips
Affiliation:
Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A. Email: dingyuan@umich.edu
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Abstract

This work addresses the need for thick layers of ferroelectric thin films on semiconductors for integrated optics applications. The deposition of BaTiO3 thin films with MgO buffers on patterned GaAs substrates is presented as an approach to achieve crack-free optical waveguiding structures. Cracking and peeling of the thin films are observed on patterns with lateral dimensions exceeding 60 microns and nearly crack-free thin films for patterns with lateral dimensions of a few microns. The cracking and peeling of the thin films is attributed to thermal expansion mismatch during the heating and cooling steps of the deposition process. A thin film stress and fracture model is used to analyze the phenomenon. Reduced cracking and peeling on the patterned features are attributed to strain relief on the patterned features. The inclusion of thick AlxOy buffer layers obtained through wet-oxidation of AlGaAs prior to BaTiO3/MgO deposition are presented as a means of obtaining electro-optic waveguide structures on GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C11.23
Copyright
Copyright © Materials Research Society 2004

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References

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