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Deposition of Gallium Nitride Films using Ammonia and Triethylgallium Seeded Helium Beams

Published online by Cambridge University Press:  21 February 2011

J. J. Sumakeris ,
R. K. Chilukuri ,
R. F. Davis  and
H. H. Lamb
J. J. Sumakeris
Affiliation:
Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905
R. K. Chilukuri
Affiliation:
Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905
R. F. Davis
Affiliation:
Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
H. H. Lamb
Affiliation:
Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905
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Abstract

Gallium nitride films have been deposited on Si(100) and Al2O3(0001) substrates using triethylgallium and ammonia seeded into highly expanded helium gas streams. A two step deposition process that reproducibly results in continuous crystalline GaN films has been developed. The microstructure and composition of the resultant films were characterized by scanning electron microscopy, reflection high energy electron diffraction and Auger electron spectroscopy and film character was correlated to deposition conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 331
Copyright
Copyright © Materials Research Society 1996

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References

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