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Depth Profiling of Ion Beam Induced Damage in Semiconductor Heterostructures

Published online by Cambridge University Press:  25 February 2011

R. Germann ,
A. Forchel ,
G. Hörcher  and
G. Weimann
R. Germann
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, Federal Republic of Germany
A. Forchel
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, Federal Republic of Germany
G. Hörcher
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, Federal Republic of Germany
G. Weimann
Affiliation:
FTZ der Deutschen Bundespost, Am Kavalleriesand 3, D-6100 Darmstadt, Federal Republic of Germany. Present adress: TU München, Walter Schottky Institut, Am Coulombwall, D-8046 Garching, Federal Republic of Germany
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Abstract

We have produced beveled cross-sections of GaAs/GaAlAs multiple quantum well structures with inclination angles of 0.55 minutes of arc with a special ion beam etching technique. The extension of the damage which is induced during the dry etching process can be evaluated directly by a comparison of spatially resolved secondary ion mass spectroscopy and photoluminescence measurements. We observe a thickness of the damaged surface layer between 36 nm for 250 eV Argon ions and 160 nm for 1000 eV Argon ions in a GaAs/GaAlAs multiple quantum well structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 749
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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