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Determination of Composition and Linear Lattice Expansion Coefficient in Si1−x Gex/Si Thin Films by Simulation of X-Ray Rocking Curves

Published online by Cambridge University Press:  22 February 2011

F. Cembali ,
R. Fabbri ,
M. Servidori ,
A. Zani  and
S. Iyer
F. Cembali
Affiliation:
CNR-Istituto LAMEL, via Castagnoli 1, Bologna 40126(Italy)
R. Fabbri
Affiliation:
CNR-Istituto LAMEL, via Castagnoli 1, Bologna 40126(Italy)
M. Servidori
Affiliation:
CNR-Istituto LAMEL, via Castagnoli 1, Bologna 40126(Italy)
A. Zani
Affiliation:
CNR-Istituto LAMEL, via Castagnoli 1, Bologna 40126(Italy)
S. Iyer
Affiliation:
IBM T.J. Watson Res. Center, Yorktown Heights, NY 10598(USA)
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Abstract

By simulation of X-ray rocking curves of Si-Ge alloys grown on Si by molecular beam epitaxy and of Ge implanted samples, the Ge composition, the linear lattice expansion coefficient, the strain depth-distribution and the static Debye-Waller factor in the MBE alloys have been determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 225
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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