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Development of intelligent pad and application to analysis of pressure distribution on polishing pad in CMP process

Published online by Cambridge University Press:  18 July 2013

Masaharu Kinoshita
Affiliation:
Nitta Haas Incorporated, 3-17-1, Kannabidai, Kyotanabe-shi, Kyoto 610-0333, Japan.
Jaehong Park
Affiliation:
Nitta Haas Incorporated, 3-17-1, Kannabidai, Kyotanabe-shi, Kyoto 610-0333, Japan.
Haedo Jeong
Affiliation:
Pusan National University, San30, Jangjeon-dong, Gumgjung-gu, Busan 609-735, Korea
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Abstract

Most of polishing conditions are not consistent during the polishing process such as pressure, velocity, temperature, pad surface asperity and slurry flow which determine the CMP performance. Traditionally, these parameters are detected by various monitoring methods on CMP polisher. This study introduces a new concept of intelligent pad system with multiple sensors and peripheral devices such as memory, CPU, battery, transmitter and so on. The main functions of the intelligent pad are sensing the change of major parameters and data processing in real-time during the polishing process. The developed intelligent pad has nine points of embedded pressure sensor and makes data processing, saving, and transmitting in real-time. Experimentally, the intelligent pad system was evaluated to understand carrier behavior and pressure distribution. Finally, the analysis of pressure distribution using the intelligent pad turned out a useful method to understand the polishing head behavior and the polishing profile.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Runnels, SR, Eyman, LM: Tribology analysis of chemical-mechanical polishing, Journal of The Electrochemical Society, 141(6), (1994), 16981701 CrossRefGoogle Scholar
Thakurta, Dito G., Borst, Christopher L., Schwedman, Donald W., Gutmann, Ronald J., and Gill, William N.: Three-Dimensional Chemical Mechanical Planarization Slurry Flow Model Based on Lubrication Theory, Journal of The Electrochemical Society, 148(4), (2001), G207214 CrossRefGoogle Scholar
Kim, Hyoungjae: Study of the contact characteristic to affect on material removal in CMP process, Thesis for doctorate of Pusan National University (2003).Google Scholar