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Development of Spin-on Pre Metal Dielectrics (PMD) for 0.10UM Design Rule and Beyond

Published online by Cambridge University Press:  01 February 2011

Zhongtao Li ,
Xiaobing Zhou ,
Dave Wyman ,
Mike Spaulding ,
Ginam Kim ,
Stelian Grigoras ,
DK Choi  and
Eric Moyer
Zhongtao Li
Affiliation:
Semiconductor Fabrication Materials, Dow Corning Corp., Midland, MI 48686, U.S.A.
Xiaobing Zhou
Affiliation:
Semiconductor Fabrication Materials, Dow Corning Corp., Midland, MI 48686, U.S.A.
Dave Wyman
Affiliation:
Semiconductor Fabrication Materials, Dow Corning Corp., Midland, MI 48686, U.S.A.
Mike Spaulding
Affiliation:
Semiconductor Fabrication Materials, Dow Corning Corp., Midland, MI 48686, U.S.A.
Ginam Kim
Affiliation:
Semiconductor Fabrication Materials, Dow Corning Corp., Midland, MI 48686, U.S.A.
Stelian Grigoras
Affiliation:
Semiconductor Fabrication Materials, Dow Corning Corp., Midland, MI 48686, U.S.A.
DK Choi
Affiliation:
Semiconductor Fabrication Materials, Dow Corning Corp., Midland, MI 48686, U.S.A.
Eric Moyer
Affiliation:
Semiconductor Fabrication Materials, Dow Corning Corp., Midland, MI 48686, U.S.A.
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Abstract

Spin-on pre metal dielectric (PMD) materials are being developed for memory and logic devices at 0.10 um design rules and beyond. The stringent design rules require a PMD material with a low thermal budget, excellent gap fill capability, and etch resistance similar to that of a thermal oxide. Spin-on PMD is being developed to meet these requirements as current PMD technologies of HDP CVD and BPSG reflow are constrained by void formation or high thermal budget requirement. One common challenge that faces spin-on PMD is inhomogeneous densification, or “corner etch”. In this paper EELS-STEM, FTIR, SEM and HF wet etching were used to study the mechanism of this phenomenon. This information provides a possible route for the development of spin-on PMD resins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B7.10
Copyright
Copyright © Materials Research Society 2002

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