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Dielectric Isolation Using Porous Silicon

Published online by Cambridge University Press:  21 February 2011

H. Baumgart ,
R. C. Frye ,
F. Phillipp  and
H. J. Leamy
H. Baumgart
Affiliation:
Philips Laboratories, Briarcliff Manor, New York 10510
R. C. Frye
Affiliation:
ATT Bell Laboratories, Murray Hill, New Jersey 07974
F. Phillipp
Affiliation:
Max Planck Institute for Metal Research, Stuttgart, W. Germany
H. J. Leamy
Affiliation:
ATT Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

The fabrication of silicon-on-insulator structures was examined utilizing epitaxial growth of Si films on porous silicon and subsequent enhanced oxidation of the porous substrate. Porous silicon films have been formed by local anodic dissolution of silicon wafers in HF, while retaining the single crystalline structure. Low temperature liquid phase epitaxy (LPE) from saturated Ga solutions as well as molecular beam epitaxy (MBE) and laser induced epitaxy have been studied. Transmission electron microscopy (TEM) has demonstrated that all three techniques can achieve crystalline Si film growth on porous silicon. Surface smoothness and crystal perfection of the resulting epitaxial layers varies considerably with each technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 63
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Watanabe, Y. and Sakai, T., Rev. Elect. Commun. Lab. 19, 899 (1971).Google Scholar
2. Watanabe, Y., Arita, Y., Yokoyama, T. and Igarashi, Y., J. Electrochem. Soc. 122, 1351 (1975).Google Scholar
3. Frye, R.C., in “Comparison of Thin Film Transistor and SOI Technologies”, Lam, H.W. and Thompson, M.J. (eds), MRS Symp. Proc., (Elsevier North Holland 1984). Preceeding Paper.Google Scholar
4. Memming, R. and Schwandt, G., Surf. Sci. 4, 109 (1966).CrossRefGoogle Scholar
5. Unagami, T., J. Electrochem. Soc., Vol.127, 476 (1980).Google Scholar
6. Imai, K., Solid State Electronics 24, 159 (1981).10.1016/0038-1101(81)90012-5Google Scholar
7. Imai, K., Unno, H. and Takaoka, H., J. Cryst. Growth 63, 547 (1983).10.1016/0022-0248(83)90166-5Google Scholar
8. Unagami, T. and Kato, K., Jap. J. Appl. Phys., Vol.16, No. 9, 1635 (1977).10.1143/JJAP.16.1635Google Scholar
9. Unagami, T., Jap. J. Appl. Phys. Vol.19, No. 2, 231 (1980).CrossRefGoogle Scholar
10. Baumgart, H., Frye, R.C., Trimble, L.E., Leamy, H.J. and Celler, G.K. in “Laser and Electron-Beam Interactions with Solids”, Appleton, B.R. and Celler, G.K., (eds), MRS symp. Proc., (Elsevier North Holland, 1982), p. 609.Google Scholar
11. Linnebach, R. and Bauser, E., J. Cryst. Growth 57, 43 (1982).Google Scholar