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Diffusion of A Deposited GeSe Film in GaAs using Ion-Beam Mixing

Published online by Cambridge University Press:  25 February 2011

N. J. Kepler  and
N. W. Cheung
N. J. Kepler
Affiliation:
Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory, University of California, Berkeley, CA 94720
N. W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory, University of California, Berkeley, CA 94720
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Abstract

Ion-beam mixing and rapid thermal annealing (RTA) techniques are used to form shallow and heavily-doped n+ layers in undoped GaAs. RTA reduces surface degradation and improves crystalline quality compared to lengthy thermal cycles, although furnace annealing producesidentical electrical characteristics. Ion-beam mixing has only a small effect on the diffusion of a deposited GeSe film, because the damage created by implantation is repaired during RTA before significant diffusion occurs. We define a threshold temperature representing the onset of significant electrical activation and/or diffusion, and propose a model relating the annealing, activation, and diffusion temperatures for the GeSe/GaAs system. RBS. SIMS, and electrical measurements show that extremely shallow layers with a sheet resistivity as low as 1480/El can be formed in GaAs by diffusion from a GeSe source. This technique has potential application to the formation of shallow ohmic contacts for GaAs integrated circuits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 291
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Nissim, Y. I., Gibbons, J. F., Magee, T. J. and Ormond, R., J. Appl. Phys., 52, 227 (1981).CrossRefGoogle Scholar
2. Nissim, Y. I., Gibbons, J. F., Evans, C. A. Jr, Deline, V. R. and Norberg, J. C.. Appl. Phys. Lett., 37, 89 (1980).Google Scholar
3. Davies, D. E., Ryan, T. G., Lorenzo, J. P. and Kennedy, E. F., “Laser and Electron-beam Solid Interactions and Materials Processing.” in the Proc. of the Materials Research Society Annual Meeting, Vol. 1. Ed. by Gibbons, J. F., Hess, L. D., and Sigmon, T. W.. North-Holland. New York, (1981), p. 247.Google Scholar
4. Leung, W., Neureuther, A. R. and Oldham, W. G., submitted to IEEE Trans. Electron Devices.Google Scholar
5. Leung, W., Cheung, N. W. and Neureuther, A., Appl. Phys. Lett. 46, 543 (1985).CrossRefGoogle Scholar
6. Wang, Z., Nuc. Inst. and Meth. in Phys. Res., B2, 784 (1984).Google Scholar
7. Davies, D. E., Kennedy, J. K. and Ludington, C. E., J. Electrochem. Soc., 122, 1374 (1975).Google Scholar
8. Woodcock, J. M., Shannon, J. M. and Clark, D. J., Sol. State Elec., 18, 267 (1975).CrossRefGoogle Scholar
9. Ghandi, S. K., VLSI Fabrication Principls (Wiley Interscience. New York, 1983). p. 32.Google Scholar
10. Bhattacharya, R. S., Rai, A. K., Pronoko, P. P., Narayan, J., Ling, S. C. and Wilson, S. R., J. Phys. Chem. Solids, 44, 61 (1983).CrossRefGoogle Scholar
11. Williams, J. S. and Harrison, H. B.. “Laser and Electron-Beam Solid Interactions and Materials Processing,” in the Proc. of the Materials Research Society Annual Meeting, Vol. 1, Ed. by Gibbons, J. F., Hess, L. D. and Sigmon, T. W.. North-Holland, New York, (1981), p. 209.Google Scholar
12. Grimaldi, M. G., Paine, B. M., Nicolet, M. A. and Sadana, D. K., J. Appl. Phys., 52, 4038 (1981).Google Scholar
13. Goldstein, B.. Phys. Rev., 121, 1305 (1961).Google Scholar
14. Fehribach, J. D., Ghez, R. and Oehrlein, G. S.. Appl. Phys. Lett., 46, 433 (1985).CrossRefGoogle Scholar