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Dislocation-Induced Surface Strain on (001) Silicon-On-Insulator

Published online by Cambridge University Press:  10 February 2011

P. Sutter  and
M.G. Lagally
P. Sutter
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
M.G. Lagally
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
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Abstract

We demonstrate a novel technique, based on low-energy electron microscopy, by which inhomogeneous uniaxial strain at the (001) surface of Si can be mapped quantitatively. Using this technique on silicon-on-insulator wafers, we determine the surface strain field induced by a single 60° dislocation and show that such extended defects can be used as monitors of heteroepitaxy-induced changes in the surface strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 235
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Srolovitz, D.J., Acta Metall. 37, 621 (1989).Google Scholar
[2] Yao, J.Y., Andersson, T.G., and Dunlop, G.L., J. Appl. Phys. 69, 2224 (1991); L. Vescan, W. Jlger, C. Dieker, K. Schmidt, A. Hartmann, and H. Luith, Mat. Res. Soc. Symp. Proc. 263, 23 (1992); T.S. Kuan and S.S. Iyer, Appl. Phys. Lett. 59, 2242 (1991); Q. Xie, A. Madhukar, P. Chen, and N.P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995);Google Scholar
[3] Tersoff, J., Teichert, C., and Lagally, M.G., Phys. Rev. Lett. 76, 1675 (1996).Google Scholar
[4] Mateeva, E., Sutter, P., Bean, J.C., and Lagally, M.G., Appl. Phys. Lett. 71, 3233 (1997).Google Scholar
[5] Shiryaev, S. Yu., Jensen, F., Hansen, J. Lundsgaard, Petersen, J. Wulff, and Larsen, A. Nylandsted, Phys. Rev. Lett. 78, 503 (1997).Google Scholar
[6] Sutter, P. and Lagally, M.G., Phys. Rev. Lett. 82, 1490 (1999).Google Scholar
[7] IBM-type instrument at the University of Wisconsin. For a description, see Tromp, R.M. and Reuter, M.C., Ultramicroscopy 36, 99 (1991).Google Scholar
[8] Tromp, R.M. and Reuter, M.C., Phys. Rev. Lett. 68, 820 (1992).Google Scholar
[9] Chadi, D.J., Phys. Rev. Lett. 59, 1691 (1987).Google Scholar
[10] Swartzentruber, B.S., Mo, Y.-W., Webb, M.B., and Lagally, M.G., J. Vac. Sci. Technol. A 7, 2901 (1989).Google Scholar
[11] The viscosity of the Si02/Si interface will ultimately limit the response of the thin Si slab and its ability to relax stress imposed by the growth of a lattice mismatched layer, i.e., growth on SO1 may differ significantly from growth on a free-standing thin Si slab.Google Scholar
[12] Krause, S., Anc, M., and Roitman, P., MRS Bulleting 23, 25 (1998).Google Scholar
[13] Mateeva, E., Sutter, P., and Lagally, M.G., to be published.Google Scholar
[14] Mundschau, M., Bauer, E., Telieps, W., and Swiech, W., Phil. Mag. A 61, 257 (1990).Google Scholar
[15] LEEM will allow etching the SOI samples, e.g. at elevated temperature in an atmosphere of molecular oxygen [Hannon, J.B., Bartelt, M.C., Bartelt, N.C., and Kellogg, G.L., Phys. Rev. Lett. 81, 4676 (1998)], while keeping an individual buried defect in the field of view. Thus, the detailed dependence of surface strain on separation from the underlying defect can be measured with this technique.Google Scholar
[16] Men, F.K., Packard, W.P., and Webb, M.B., Phys. Rev. Lett. 61, 2469 (1988); M.B. Webb, F.K. Men, B.S. Swartzentruber, R. Kariotis, and M.G. Lagally, Surf. Sci. 242, 23 (1991).Google Scholar
[17] Wu, F. and Lagally, M.G., Phys. Rev. Lett. 75, 2534 (1995).Google Scholar
[18] Direct observations of dislocation glide in our SOI samples by LEEM at high temperature support the conclusion that we see surface strain due to individual dislocations. Repeated annealing increases the dislocation density. The strain fields of close-lying dislocations can then overlap, creating stress distributions that are symmetric about an axis parallel to the line direction (see fig. 2a).Google Scholar
[19] Hirth, J.P. and Lothe, J., “Theory of Dislocations”, 2nd ed., Wiley (1982).Google Scholar
[20] The hatched part of the calculated exx profile appears to be an artifact resulting from the incorrect treatment of the free-surface boundary condition in our first-order calculation. A calculation of the surface strain field based on a complete solution of the image problem is currently in progress.Google Scholar
[21] The contrast mechanism in bright-field LEEM imaging of three-dimensional islands has been discussed in Sutter, P., Mateeva, E., Sullivan, J.S., and Lagally, M.G., Thin Solid Films 336, 262 (1998).Google Scholar
[22] Our observations indicate that the configuration of the underlying dislocations does not change during such growth experiments, i.e., we detect dynamic changes in the response of the surface to a constant strain field.Google Scholar
[23] Mo, Y.W. and Lagally, M.G., J. Cryst. Growth 111, 876 (1991); X.R. Qin, private communication.Google Scholar