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Dislocations Nucleating Growth in Liquid Phase Epitaxy of Gallium Arsenide

Published online by Cambridge University Press:  15 February 2011

Werner Möhling ,
H. Weishart  and
E. Bauser
Werner Möhling
Affiliation:
Max.-Planck-Arbeitsgruppe “Röntgenbeugung“, Hausvogteiplatz 5-7, D-O-1080 Berlin, Germany
H. Weishart
Affiliation:
Max-Planck-.Institut für Festkörperforschung, Heisenbergstraβe 1, D-W-7000 Stuttgart 80, Germany
E. Bauser
Affiliation:
Max-Planck-.Institut für Festkörperforschung, Heisenbergstraβe 1, D-W-7000 Stuttgart 80, Germany
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Abstract

Dislocations in GaAs are analysed by X-ray topography in order to relate their nature to their efficiency in generating growth steps. The analysis is mainly based on comparing double crystal back reflection images of the defects to calculated misorientations of the crystal surface which are caused at the outcrop. All types of dislocations are equally effective provided their Burgers vector has a component normal to the growth interface. Concentric growth step patterns, which develop in varying numbers on different samples are not caused by substrate dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 333
Copyright
Copyright © Materials Research Society 1993

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