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Dopant Activation And Epitaxial Regrowth in P-ImplantedPseudomorphic Ge0.12Si0.88 Layers on Si(100)

Published online by Cambridge University Press:  15 February 2011

D. Y. C. Lie ,
T. K. Cams ,
N. D. Theodore ,
F. Eisen ,
M.-A. Nicolet  and
K. L. Wang
D. Y. C. Lie
Affiliation:
California Institute of Technology, M/S 116–81, Pasadena, CA 91125
T. K. Cams
Affiliation:
University of California, Los Angeles, CA 90024
N. D. Theodore
Affiliation:
D. N. Theodore, Motorola Inc., Mesa, Arizona, AZ 85202
F. Eisen
Affiliation:
California Institute of Technology, M/S 116–81, Pasadena, CA 91125
M.-A. Nicolet
Affiliation:
California Institute of Technology, M/S 116–81, Pasadena, CA 91125
K. L. Wang
Affiliation:
University of California, Los Angeles, CA 90024
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Abstract

A pseudomorphic Ge0.12Si0.88 film 265 nm thick grownon a Si (100) substrate by molecular beam epitaxy was implanted at roomtemperature with a dose of 1.5 × 1015 cm2 of 100 keV Pions. The projected range of the ions is about 125 nm, which is well withinthe film thickness. Only the top portion of the Ge0.12Si0.88 layer was amorphized by theimplantation. Both implanted and non-implanted samples were subsequentlyannealed in vacuum for 30 Minutes from 400 °C to 800 °C. Values of electronHall sheet mobility and concentration in the implanted Ge0.12Si0.88 epilayer were measured afterannealing. The solid phase epitaxial regrowth is complete at 550 °C, wherethe implanted phosphorus reaches - 100 % activation. The regrown Ge0.12Si0.88 layer exhibits inferior crystallinequality to that of the virgin sample and is relaxed, but the non-implantedportion of the film remains pseudomorphic at 550 °C. When annealed at 800°C, the strain in the whole epilayer relaxes. The sheet electron mobilityvalues measured at room temperature in the regrown samples (Tann≥ 550 °C) are about 20% less than those of pure Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 485
Copyright
Copyright © Materials Research Society 1994

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References

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