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Drastic Change in the Gan Film Quality by In-Situ Controlling Surface Reconstructions In Gsmbe

Published online by Cambridge University Press:  10 February 2011

X. Q. Shen ,
S. Tanaka ,
S. Iwai  and
Y. Aoyagi
X. Q. Shen
Affiliation:
sxq@postmaTiken.go.jp
S. Tanaka
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-Shi, Saitama, 351-01 Japan
S. Iwai
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-Shi, Saitama, 351-01 Japan
Y. Aoyagi
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-Shi, Saitama, 351-01 Japan
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Abstract

GaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 223
Copyright
Copyright © Materials Research Society 1998

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