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Dry Hydrogen Plasma Cleaning for Local Epitaxial Growth

Published online by Cambridge University Press:  21 February 2011

Juergen Ramm ,
Eugen Beck ,
Ignaz Eisele ,
Walter Hansch ,
Bernd-Ulrich Klepser  and
Hans Senn
Juergen Ramm
Affiliation:
BALZERS Ltd., FL-9496 Balzers, Liechtenstein
Eugen Beck
Affiliation:
BALZERS Ltd., FL-9496 Balzers, Liechtenstein
Ignaz Eisele
Affiliation:
Universität der Bundeswehr München, D–8014 Neubiberg, Germany
Walter Hansch
Affiliation:
Universität der Bundeswehr München, D–8014 Neubiberg, Germany
Bernd-Ulrich Klepser
Affiliation:
Federal Institute of Technology, CH-8092 Zürich, Switzerland
Hans Senn
Affiliation:
Neu–Technikum, CH-9470 Buchs, Switzerland
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Abstract

An argon/hydrogen discharge plasma was created with a UHV compatible plasma source. This low energy plasma was utilized to remove – in a single step – the native oxide and the hydrocarbons from the wafer surface at substrate temperatures between 100°C and 400°C. During the plasma cleaning procedure, residual gas ions were monitored to elucidate the process chemistry. To optimize the procedure, the interfaces between the plasma cleaned wafer and the MBE grown epilayer were investigated by scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (XTEM). The cleaning process was also applied to patterned silicon substrates. Subsequent local epitaxial growth by MBE at 550°C without the typical high temperature annealing step was achieved, suggesting that the in–situ dry cleaning procedure caused no surface damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 91
Copyright
Copyright © Materials Research Society 1993

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References

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