Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T23:09:51.729Z Has data issue: false hasContentIssue false
  • English
  • Français

The effect of a high temperature reaction of Cu-In-Ga metallic precursors on the formation of Cu(In,Ga)(Se,S)2

Published online by Cambridge University Press:  28 August 2013

Dominik M. Berg ,
Christopher P. Thompson  and
William N. Shafarman
Dominik M. Berg
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, U.S.A.
Christopher P. Thompson
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, U.S.A.
William N. Shafarman
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, U.S.A.
Get access

Abstract

The influence of higher processing temperatures on the formation reaction of Cu(In,Ga)(Se,S)2 thin films using a three step reactive annealing process and on the device performance has been investigated. High process temperatures generally lead to the formation of larger grains, decrease the amount of void formation and their distribution at the back Mo/Cu(In,Ga)(Se,S)2 interface, and lead to a much faster formation reaction that shortens the overall reaction process. However, high temperature processing also leads to a decrease in device performance. A loss in open circuit voltage and fill factor could be attributed to enhanced interface recombination processes for the samples fabricated at higher process temperatures, which itself may be caused by a lack of Na and subsequent poor passivation of interface defect states. The lack of Na resulted in a decrease in free charge carrier concentration by two orders of magnitude.

Keywords

thin filmphotovoltaicannealing
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium C – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 3 - 8
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Nakamura, M. et al. ., “Achievement of 17.5% Efficiency with 30x30cm2-Sized Cu(In, Ga)(Se, S)2 Submodules”, in 38th IEEE Photovoltaic Specialists Conference, 2012 CrossRefGoogle Scholar
Mannstadt, W. et al. ., “New glass substrate enabling high performance CIGS solar cells”, in 25th EU-PVSEC, 2010, p. 3516–3518 Google Scholar
Haarstrich, J. et al. ., Sol. Energ. Mat. Sol. C. 95, 1028–1030 (2011)CrossRefGoogle Scholar
Contreras, M.A. et al. ., “Improved energy conversion efficiency in wide-bandgap Cu(In, Ga)Se2 solar cells”, in 37th IEEE Photovoltaic Specialists Conference, 2011 CrossRefGoogle Scholar
Kim, K. et al. ., J. Appl. Phys. 111, 083710 (2012)CrossRefGoogle Scholar
Michelson, C.E. et al. ., Appl. Phys. Lett. 47, 412 (1985)CrossRefGoogle Scholar
Fahrenbruch, A.L. and Bude, R.H., “Fundamentals of Solar Cells”, Academic press, New York, 1983, p. 236–239 Google Scholar
Thompson, C.P. et al. ., “Temperature dependence of VOC in CdTe and Cu(InGa)(SeS)2-based solar cells”, in 33rd IEEE Photovoltaic Specialists Conference, 2008 Google Scholar
Erslev, P.T. et al. ., Thin Solid Films 517, 2277–2281 (2009)CrossRefGoogle Scholar
Contreras, M. A. et al. ., “On the role of Na and modifications to Cu(In, Ga)Se2 absorber materials using thin-MF (M = Na, K, Cs) precursor layers”, in 26th IEEE Photovoltaic Specialists Conference, 1997 Google Scholar