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Effect of Annealing on Undoped a-Si:H Films Prepared by Mercury-Sensitized Photochemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

T. Niiyama  and
H. Nozaki
T. Niiyama
Affiliation:
Toshiba Corp. R&D Center 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan.
H. Nozaki
Affiliation:
Toshiba Corp. R&D Center 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan.
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Abstract

The effects of annealing on undoped a-Si:H films were studied. Films of a-Si:H were prepared by mercury-sensitized photochemical vapor deposition, and were annealed immediately. The hydrogen configuration was altered in the annealing process below 200°C, although films were prepared at a substrate temperature of 230°C. At the same time, electron drift mobility greatly increased. These observations indicate a reduction in the number of tail states in the a-Si:H band-gap. Thus the annealing below the substrate temperature clearly influences not only the bonded-hydrogen atoms but also the Si-Si network in the films to some extent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 159
Copyright
Copyright © Materials Research Society 1992

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References

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