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The Effect of CU Intermediate Layer made by IBAD on the CU Surface Film of E–Gun Evaporation

Published online by Cambridge University Press:  25 February 2011

Jie Yang ,
Chen Wang ,
Kun Tao  and
Yudien Fan
Jie Yang
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.
Chen Wang
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.
Kun Tao
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.
Yudien Fan
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.
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Abstract

Cu intermediate layers (IL) by argon ion beam assisted deposition(IBAD) between substrates and Cu surface films (SF) deposited by electron-gun were made and their effect on the microstructure and properties of the Cu surface films were studied. Primary deposition variables were ion energy and substrates type. Trends in crystallographic texture, crystal-size and resistivity of Cu surface films with different IBAD layers on different substrates are significantly different. Analyzed by RBS, and XRD, the IBAD intermediate layer changed the crystallinity of Cu SF and increased the interface adhesion between the Cu SF and substrate. The experimental results shows that films with lower resistivity and better interface adhesion could be obtained by IBAD- PVD combined technique. The mechanism of crystallographic texture formation is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 763
Copyright
Copyright © Materials Research Society 1993

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