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The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions

Published online by Cambridge University Press:  10 February 2011

S. L. Buczkowski ,
Zhonghai Yu ,
M. Richards-Babb ,
N. C. Giles ,
L. T. Romano  and
T. H. Myers
S. L. Buczkowski
Affiliation:
Physics Department,
Zhonghai Yu
Affiliation:
Physics Department,
M. Richards-Babb
Affiliation:
Chemistry Department, West Virginia University, Morgantown, WV 26506;
N. C. Giles
Affiliation:
Physics Department,
L. T. Romano
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304; tmyers@wvu.edu
T. H. Myers
Affiliation:
Physics Department,
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Abstract

Nucleation and growth of GaN under Ga-rich conditions by molecular beam epitaxy using a nitrogen rf plasma source is shown to result in both a smoother GaN surface and a reduced inversion domain content. In addition, preliminary results of the dramatic effect of atomic hydrogen on growth kinetics for Ga-rich growth are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 197
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Amano, H., Sawaki, N., Asaki, I., and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
2. Nakamura, S., Jpn. J. Appl. Phys. 30, 1705 (1991).Google Scholar
3. Kuznia, J. N., Asif Khan, M., Olson, D. T., Kaplan, R., and Freitas, J., J. Appl. Phys. 73, 4700 (1993).Google Scholar
4. Qian, W., Skowronski, M., DeGraef, M., Doverspike, K., Rowland, L. B., and Gaskill, D. K., Appl. Phys. Lett. 66, 1252 (1995).Google Scholar
5. Lester, S. D., Ponce, F. A., Crafford, M. G., and Steigerwald, D. A., Appl. Phys. Lett. 66, 1249 (1995).Google Scholar
6. Trager-Cowan, C., O’Donnell, K.P., Hooper, S.E. and Foxon, C.T., Appl. Phys. Lett. 68, 355 (1996).Google Scholar
7. Sitar, Z., Smith, L. L., and Davis, R. F., J. Cryst. Growth 141, 11 (1994).Google Scholar
8. Kapolnek, D., Wu, X. H., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., DenBaars, S. P., and Speck, J. S., Appl. Phys. Lett. 67, 1541 (1995).Google Scholar
9. Yu, Zhonghai, Buczkowski, S.L., Giles, N.C., Myers, T.H. and Richards-Babb, M.R., Appl. Phys. Lett. 69, 2731 (1996).Google Scholar
10. Romano, L.T., Northrup, J.E. and O’Keefe, M.A., Appl. Phys. Lett. 69, 2394 (1996).Google Scholar
11. Richards-Babb, M., Buczkowski, S.L., Yu, Zhonghai, And Myers, T.H., Mater. Res. Soc. Symp. Proc. 395, 237 (1996).Google Scholar
12. Moustakas, T.D. and Molnar, R.J., Mat. Res. Symp. Proc. 281, 753 (1993).Google Scholar
13. See, for example, Guha, S., Bojarczuk, N.A. and Kisher, D.W., Appl. Phys. Lett. 69, 2879 (1996).Google Scholar
14. Jones, C.R., Lei, T., Kaspi, R. and Evans, K.R., Mater. Res. Soc. Symp. Proc. 395, 141 (1996).Google Scholar
15. Brandt, M.S., Johnson, N.M., Molnar, R.J., Singh, R. and Moustakas, T.D., Appl. Phys. Lett. 64, 2264 (1996).Google Scholar