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Effect of Interface and Surface on the Performance of a-Si:H TFTs

Published online by Cambridge University Press:  21 February 2011

Jin Jang ,
Moon Youn Jung ,
Sun Sung Yoo ,
Hyon Kyun Song  and
Jung Mok Jun
Jin Jang
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Moon Youn Jung
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Sun Sung Yoo
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Hyon Kyun Song
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Jung Mok Jun
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
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Abstract

We have studied the effects of interface and surface on the performance of hydrogenated amorphous silicon(a-Si:H) thin film transistors. The effects of rf power, the buffer layer between the gate insulator and a-Si:H, and the surface oxidation on the performance on the a-Si:H TFTs have been investigated. By introducing suitable buffer layer, we can increase the mobility up to 2.1 cm2/Vs. The surface oxidation gives rise to the electron accumulation near the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 973
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1] Tsu, D.V., Lucovsky, G. and Mantini, M.J., Phys. Rev. B33, 7069(1986).Google Scholar
2] Kim, S.S., Tsu, D.V. and Lucovsky, G., J. Vac. Sci. Technol. A6, 1740(1988).Google Scholar
3] Parsons, G.N., Tsu, D.V. and Lucovsky, G., J. Vac. Sci. Technol. A6, 1912(1988).Google Scholar
4] Kim, S.C., Jung, M.H. and Jang, J., Appl. Phys. Lett. 58, 28 (1991).Google Scholar
5] Pulfrey, D.L. and Tarr, N.G., in “Introduction to Microelectronic Devices” (Preentice-Hall International Editions, Englewood Cliffs, NJ, 1989), p. 205 Google Scholar
6] Kanicki, J. and Hug, S., Appl. Phys. Lett. 54, 733(1989).Google Scholar