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Effect of Location of Sodium Precursor on the Morphological and Device Properties of CIGS Solar Cells

Published online by Cambridge University Press:  27 September 2013

Neelkanth G. Dhere ,
Ashwani Kaul  and
Helio Moutinho
Neelkanth G. Dhere
Affiliation:
Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, FL 32922, USA.
Ashwani Kaul
Affiliation:
Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, FL 32922, USA.
Helio Moutinho
Affiliation:
National Renewable Energy Laboratory, Golden CO, USA.
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Abstract

Sodium plays an important role in the development of device quality CIGS (Cu-In-Ga-Se) and CIGSeS (Cu-In-Ga-Se-S) chalcopyrite thin film solar cells. In this study the effect of location of sodium precursor on the device properties of CIGS solar cells was studied. Reduction in the surface roughness and improvement in the crystallinity and morphology of the absorber films was observed with increase in sodium quantity from 0 Å to 40 Å and to 80 Å NaF. It was found that absorber films with 40 Å and 80 Å NaF in the front of the metallic precursors formed better devices compared to those with sodium at the back. Higher open circuit voltages and short circuit current values were achieved for devices made with these absorber films as well.

Keywords

thin filmsputteringorganometallic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium C – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 51 - 60
Copyright
Copyright © Materials Research Society 2013 

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References

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