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Effect of Material Properties on the Performance of a-Si,Ge:H,F Photodetectors

Published online by Cambridge University Press:  26 February 2011

D. S. Shen ,
J. P. Conde ,
V. Chu ,
S. Aljishi  and
S. Wagner
D. S. Shen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. P. Conde
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Aljishi
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We report a study of the transient photoconductivity of a-Si,Ge:H,F in reversebiased Schottky barrier detectors. The barriers were used to detect light pulses from commercial (AI,Ga)As laser diodes. The photodetectors work at a modulation frequency of up to 10MHz. Lowering the optical gap, Eopt, reduces the optical absorption length but raises the dark current and thus reduces the specific detectivity D*. The charge collection efficiency is determined by deep trapping of electrons in the conduction band tail. The frequency response is controlled by the electron drift mobility. The performance of the photodetector is discussed in terms of the optical and transport properties of the a- Si,Ge:H,F alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 457
Copyright
Copyright © Materials Research Society 1988

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